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基于硅纳米柱定向条件的选择性介电超表面

Selective Dielectric Metasurfaces Based on Directional Conditions of Silicon Nanopillars.

作者信息

Algorri José Francisco, García-Cámara Braulio, Cuadrado Alexander, Sánchez-Pena José Manuel, Vergaz Ricardo

机构信息

GDAF-UC3M, Displays and Photonics Applications Group, Electronic Technology Department, Carlos III University of Madrid, Leganés, 28911 Madrid, Spain.

Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid, Spain.

出版信息

Nanomaterials (Basel). 2017 Jul 7;7(7):177. doi: 10.3390/nano7070177.

Abstract

Dielectric metasurfaces based on high refractive index materials have been proposed recently. This type of structure has several advantages over their metallic counterparts. In this work, we demonstrate that dielectric metasurfaces can be theoretically designed satisfying Kerker's zero-forward condition. This is the first time that a dielectric metasurface based on this principle has been designed. A selective dielectric metasurface of silicon nanopillars is designed to work at 632.8 nm. This structure could work both as a dielectric mirror and a reject band filter. Furthermore, by scaling up the structure, it could be possible to manufacture a terahertz (THz) dielectric mirror.

摘要

基于高折射率材料的介电超表面最近已被提出。这种结构相对于金属超表面具有几个优点。在这项工作中,我们证明了介电超表面可以在理论上设计以满足克尔零向前条件。这是首次基于该原理设计介电超表面。设计了一种硅纳米柱的选择性介电超表面,使其在632.8纳米波长下工作。这种结构既可以用作介电镜,也可以用作带阻滤波器。此外,通过扩大该结构规模,有可能制造出太赫兹(THz)介电镜。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8fc/5535243/85532ebd4c54/nanomaterials-07-00177-g001.jpg

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