通过 N 吸附增强 SbSeTe 拓扑绝缘体中的载流子输运特性。

Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.

Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.

Sci Rep. 2017 Jul 11;7(1):5133. doi: 10.1038/s41598-017-05369-y.

The carrier transport characteristics of SbSeTe topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the SbSeTe crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N molecular.

研究了 SbSeTe 拓扑绝缘体在暴露于不同氮气体积分数后的载流子输运特性。在暴露 2 天后，10 K 时 SbSeTe 晶体的磁电阻（MR）斜率增加了约 100%。Shubnikov-de Haas（SdH）振荡幅度增加了 30%，而振荡频率保持不变。MR 斜率和迁移率在很宽的温度范围内具有相同的温度依赖性。所有测量数据都符合 MR 斜率和迁移率之间的线性关系，这支持了我们的假设，即 MR 的增加和 SdH 振荡的增强可能是由吸附 N 分子引起的迁移率增强所致。