拓扑绝缘体中朗道能级相关的类阿哈罗诺夫 - 玻姆振荡的观测

Observation of Landau Level-Dependent Aharonov-Bohm-Like Oscillations in a Topological Insulator.

作者信息

Huang Shiu-Ming, Lin Chien, You Sheng-Yu, Chen Pin-Cyuan, Hong Jai-Long, Wong Jyun-Fong, Yan You-Jhih, Yu Shih-Hsun, Chou Mitch M C

机构信息

Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.

Taiwan Consortium of Emergent Crystalline Materials, TCECM, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.

出版信息

Nanoscale Res Lett. 2020 Aug 26;15(1):171. doi: 10.1186/s11671-020-03389-8.

DOI:10.1186/s11671-020-03389-8

PMID:32844331

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7447688/

Abstract

We study the quantum oscillations in the BiSbTe topological insulator. In addition to the Shubnikov-de Haas (SdH) oscillation, the Aharonov-Bohm-like (ABL) oscillations are also observed. The ABL oscillation period is constant at each Landau level (LL) which is determined from the SdH oscillation. The shorter ABL oscillation periods are observed at lower LLs. The oscillation period is proportional to the square root of the LL at temperatures. The ratio of the ABL oscillation period to the effective mass is weak LL dependence. The LL-dependent ABL oscillation might originate from the LL-dependent effective mass.

摘要

我们研究了BiSbTe拓扑绝缘体中的量子振荡。除了舒布尼科夫-德哈斯（SdH）振荡外，还观察到了类阿哈罗诺夫-玻姆（ABL）振荡。ABL振荡周期在由SdH振荡确定的每个朗道能级（LL）处是恒定的。在较低的朗道能级处观察到较短的ABL振荡周期。在温度下，振荡周期与朗道能级的平方根成正比。ABL振荡周期与有效质量的比值对朗道能级的依赖性较弱。与朗道能级相关的ABL振荡可能源于与朗道能级相关的有效质量。