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CeO2-石墨烯纳米结构的 Ce 离子、表面氧空位、可见光诱导光催化染料降解和光电电容性能。

Ce-ion, Surface Oxygen Vacancy, and Visible Light-induced Photocatalytic Dye Degradation and Photocapacitive Performance of CeO-Graphene Nanostructures.

机构信息

School of Chemical Engineering, Yeungnam University, Gyeongsan-si, Gyeongbuk, 38541, South Korea.

Chemical Sciences, Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong, BE1410, Brunei Darussalam.

出版信息

Sci Rep. 2017 Jul 19;7(1):5928. doi: 10.1038/s41598-017-06139-6.

Abstract

Cerium oxide nanoparticles (CeO NPs) were fabricated and grown on graphene sheets using a facile, low cost hydrothermal approach and subsequently characterized using different standard characterization techniques. X-ray photoelectron spectroscopy and electron paramagnetic resonance revealed the changes in surface states, composition, changes in Ce to Ce ratio, and other defects. Transmission electron microscopy (TEM) and high resolution TEM revealed that the fabricated CeO NPs to be spherical with particle size of ~10-12 nm. Combination of defects in CeO NPs with optimal amount of two-dimensional graphene sheets had a significant effect on the properties of the resulting hybrid CeO-Graphene nanostructures, such as improved optical, photocatalytic, and photocapacitive performance. The excellent photocatalytic degradation performances were examined by monitoring their ability to degrade Congo red ~94.5% and methylene blue dye ~98% under visible light irradiation. The photoelectrode performance had a maximum photocapacitance of 177.54 Fg and exhibited regular capacitive behavior. Therefore, the Ce-ion, surface-oxygen-vacancies, and defects-induced behavior can be attributed to the suppression of the recombination of photo-generated electron-hole pairs due to the rapid charge transfer between the CeO NPs and graphene sheets. These findings will have a profound effect on the use of CeO-Graphene nanostructures for future energy and environment-related applications.

摘要

氧化铈纳米粒子(CeO NPs)通过简便、低成本的水热法在石墨烯片上制造和生长,随后使用不同的标准表征技术进行了表征。X 射线光电子能谱和电子顺磁共振揭示了表面状态、组成、Ce 与 Ce 比率的变化以及其他缺陷的变化。透射电子显微镜(TEM)和高分辨率 TEM 显示,所制备的 CeO NPs 为球形,粒径约为 10-12nm。CeO NPs 中的缺陷与二维石墨烯片的最佳量结合对所得 CeO-石墨烯纳米结构的性能有显著影响,例如改善了光学、光催化和光电电容性能。通过监测其在可见光照射下降解刚果红94.5%和亚甲基蓝染料98%的能力,考察了其优异的光催化降解性能。光电电极的性能具有 177.54Fg 的最大光电容和表现出规则的电容行为。因此,Ce 离子、表面氧空位和缺陷诱导的行为可归因于 CeO NPs 和石墨烯片之间快速电荷转移导致光生电子-空穴对复合的抑制。这些发现将对 CeO-石墨烯纳米结构在未来与能源和环境相关的应用中产生深远的影响。

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