Wind Lukas, Sistani Masiar, Song Zehao, Maeder Xavier, Pohl Darius, Michler Johann, Rellinghaus Bernd, Weber Walter M, Lugstein Alois
Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna 1040, Austria.
Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, Thun 3602, Switzerland.
ACS Appl Mater Interfaces. 2021 Mar 17;13(10):12393-12399. doi: 10.1021/acsami.1c00502. Epub 2021 Mar 8.
Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction. Transmission electron microscopy confirmed the purity and crystallinity of the formed Al segments with an abrupt interface to the remaining Ge segment. In good agreement with the theoretical value of bulk Al-Ge Schottky junctions, a barrier height of 200 ± 20 meV was determined. Photoluminescence and μ-Raman measurements proved the optical quality of the Ge channel embedded in the monolithic Al-Ge-Al heterostructure. Together with the wafer-scale accessibility, the proposed fabrication scheme may give rise to the development of key components of a broad spectrum of emerging Ge-based devices requiring monolithic metal-semiconductor-metal heterostructures with high-quality interfaces.
低维锗被视为新兴光电器件的一种有前景的构建模块。在此，我们展示了一种晶圆级平台技术，该技术能够通过热诱导的铝 - 锗交换反应制备单片式铝 - 锗 - 铝纳米结构。透射电子显微镜证实了所形成的铝段的纯度和结晶度，其与剩余的锗段具有陡峭的界面。与体相铝 - 锗肖特基结的理论值高度吻合，确定了势垒高度为200±20毫电子伏特。光致发光和μ拉曼测量证明了嵌入单片式铝 - 锗 - 铝异质结构中的锗沟道的光学质量。连同晶圆级可加工性，所提出的制造方案可能会推动一系列需要具有高质量界面的单片式金属 - 半导体 - 金属异质结构的新兴锗基器件关键组件的发展。
