Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
Nano Lett. 2013 Feb 13;13(2):555-8. doi: 10.1021/nl3040674. Epub 2013 Jan 3.
Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as 150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theoretically assessed by a method that combines Fermi's golden rule and a numerical Schrödinger-Poisson simulation to determine the surface scattering potential with the theoretical calculations being consistent with experiments. Near ballistic transport (80% of the ballistic limit) is demonstrated experimentally for transistors with a channel length of ~60 nm, owing to the long mean free path of electrons in InAs NWs.
室温下顶栅 InAs 纳米线（NW）晶体管中电子的弹道输运得到了实验观察和理论研究。从长度相关的研究中，直接提取出低场平均自由程约为 150nm。由于表面粗糙度散射的主导作用，平均自由程与温度无关。平均自由程也通过一种将费米黄金定则和数值薛定谔-泊松模拟相结合的方法进行了理论评估，以确定表面散射势，理论计算与实验结果一致。由于 InAs NW 中电子的平均自由程较长，实验上在长度约为 60nm 的晶体管中实现了近弹道输运（~80%的弹道极限）。
