Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, School of Materials Science & Engineering, Tongji University , Shanghai 201804, China.
Department of Mining and Materials Engineering, McGill University , Montreal, Quebec H3A 0C5, Canada.
ACS Appl Mater Interfaces. 2017 Aug 16;9(32):27004-27013. doi: 10.1021/acsami.7b06533. Epub 2017 Aug 1.
A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb-SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the SbSe phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb-SbSe thin film.
一种多层薄膜，由两种不同的相变材料（PCM）组件交替沉积而成，为调整和利用其组件的良好性能提供了有效手段，有望为高性能 PCM 开辟新途径。本研究通过实验和第一性原理计算系统地研究了 SnSb-SbSe 多层薄膜作为潜在的 PCM，结果表明这些多层薄膜具有良好的电阻率、稳定的热稳定性和优异的相变速度。特别是，在器件测试中，该多层薄膜的潜在工作温度显示为 122.0°C，相变速度达到 5ns。研究表明，多层薄膜的良好热稳定性来自 SbSe 相的形成，而快速的相变速度则归因于空位和 SbSe 亚稳相的形成。还表明，SbSe 亚稳相有助于进一步提高结晶态的电阻率和非晶态的热稳定性，对于确定多层 SnSb-SbSe 薄膜的性能至关重要。
