Li Anding, Liu Ruirui, Liu Liu, Chen Yukun, Zhou Xiao
School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Materials (Basel). 2024 Jun 6;17(11):2773. doi: 10.3390/ma17112773.
This paper presents a comprehensive investigation into the thermal stability of superlattice-like (SLL) thin films fabricated by varying the sputtering sequences of the SLL [GeSb(25nm)/GeTe(25nm)] and SLL [GeTe(25nm)/GeSb(25nm)] configurations. Our results reveal significantly enhanced ten-year data retention () for both thin films measured at 124.3 °C and 151.9 °C, respectively. These values surpass the of GeSbTe (85 °C), clearly demonstrating the superior thermal stability of the studied SLL configurations. Interestingly, we also observe a distinct difference in the thermal stability between the two SLL configurations. The superior thermal stability of SLL [GeTe(25nm)/GeSb(25nm)] is attributed to the diffusion of the Sb precipitated phase from GeSb to GeTe. This diffusion process effectively reduces the impact of the Sb phase on the thermal stability of the thin film. In contrast, in the case of SLL [GeSb(25nm)/GeTe(25nm)], the presence of the Sb precipitated phase in GeSb facilitates the crystallization of GeTe, leading to reduced thermal stability. These findings underscore the significant influence of the sputtering sequence on the atomic behavior and thermal properties of superlattice-like phase change materials. Such insights provide a robust foundation for the design and exploration of novel phase change materials with improved thermal performance.
本文对通过改变超晶格状（SLL）薄膜[GeSb(25nm)/GeTe(25nm)]和SLL薄膜[GeTe(25nm)/GeSb(25nm)]的溅射顺序制备的薄膜的热稳定性进行了全面研究。我们的结果表明，分别在124.3℃和151.9℃下测量的这两种薄膜的十年数据保持率均显著提高。这些数值超过了GeSbTe的（85℃），清楚地证明了所研究的SLL结构具有优异的热稳定性。有趣的是，我们还观察到两种SLL结构在热稳定性上存在明显差异。SLL薄膜[GeTe(25nm)/GeSb(25nm)]优异的热稳定性归因于Sb沉淀相从GeSb扩散到GeTe。这种扩散过程有效地降低了Sb相对薄膜热稳定性的影响。相比之下，在SLL薄膜[GeSb(25nm)/GeTe(25nm)]的情况下，GeSb中Sb沉淀相的存在促进了GeTe的结晶，导致热稳定性降低。这些发现强调了溅射顺序对超晶格状相变材料的原子行为和热性能的重大影响。这些见解为设计和探索具有改善热性能的新型相变材料提供了坚实的基础。
