You Haipeng, Hu Yifeng, Lai Tianshu, Chou Qingqian, Zhu Xiaoqin, Zou Hua
School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, People's Republic of China.
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.
IET Nanobiotechnol. 2018 Dec;12(8):1080-1083. doi: 10.1049/iet-nbt.2018.5120.
To improve thermal stability and reduce power dissipation of phase-change memory (PCM), the oxygen-doped SnSb (SS) thin film is proposed by magnetron sputtering in this study. Comparing to undoped Sn15Sb85(SS), the oxygen-doped-SS thin film has superior thermal stability and better data retention. Meanwhile, the electrical conductivity of crystallisation oxygen-doped-SS thin film is also lower than that of SS, which means its less power consuming in PCM. The electrical conductivity ratio between amorphous and crystalline states for oxygen-doped SS reaches up to two orders of magnitude. After oxygen doping, the root-mean-square surface roughness from amorphous (0.29 nm) to crystalline (0.46 nm) state for oxygen-doped-SS thin films becomes smaller. The switching time of amorphisation process for the oxygen-doped-SS thin film (∼2.07 ns) is shorter than GeSbTe (GST) (∼3.05 ns). X-ray diffractometer is recorded to investigate the change of crystalline structure. Thus, the authors infer that oxygen-doped SS is a promising phase-change thin film for PCM.
为了提高相变存储器（PCM）的热稳定性并降低功耗，本研究通过磁控溅射法制备了氧掺杂的SnSb（SS）薄膜。与未掺杂的Sn15Sb85（SS）相比，氧掺杂的SS薄膜具有更高的热稳定性和更好的数据保持性。同时，结晶态氧掺杂的SS薄膜的电导率也低于SS，这意味着其在PCM中的功耗更低。氧掺杂的SS在非晶态和晶态之间的电导率比达到两个数量级。氧掺杂后，氧掺杂的SS薄膜从非晶态（0.29 nm）到晶态（0.46 nm）状态的均方根表面粗糙度变小。氧掺杂的SS薄膜的非晶化过程的开关时间（约2.07 ns）比GeSbTe（GST）（约3.05 ns）短。通过记录X射线衍射仪来研究晶体结构的变化。因此，作者推断氧掺杂的SS是一种有前途的用于PCM的相变薄膜。
