Institute of Microelectronics, Peking University, Beijing, 100871, China.
Sci Rep. 2017 Jul 24;7(1):6239. doi: 10.1038/s41598-017-06467-7.
In this paper, a new pattern of anomalous random telegraph noise (RTN), named "reversal RTN" (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage, the rRTN data exhibit two zones with identical amplitudes but reversal time constants. This abnormal switching behavior can be explained by the theory of complete 4-state trap model (with two stable states and two metastable states), rather than the simple 2-state or improved 3-state trap model. The results provide a direct experimental evidence of the existence of two metastable states in a single oxide trap, contributing to the comprehensive understanding of trap-related reliability and variability issues in nanoscale transistors.
在本文中，我们在具有高介电常数栅介质的纳米尺度金属-氧化物-半导体场效应晶体管（MOSFET）的漏极电流中观察到一种新的反常随机电报噪声（RTN）模式，称为“反转 RTN”（rRTN）。在每个栅极电压下，rRTN 数据表现出两个具有相同幅度但反转时间常数的区域。这种异常的开关行为可以用完整的四态陷阱模型理论（具有两个稳定态和两个亚稳态）来解释，而不是简单的两态或改进的三态陷阱模型。研究结果为单个氧化物陷阱中存在两个亚稳态提供了直接的实验证据，有助于全面理解纳米尺度晶体管中与陷阱相关的可靠性和可变性问题。
