Ma Yue, Bi Jinshun, Wang Hanbin, Fan Linjie, Zhao Biyao, Shen Lizhi, Liu Mengxin
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China.
Nanomaterials (Basel). 2022 Dec 6;12(23):4344. doi: 10.3390/nano12234344.
In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transistors, such as the fully depleted SOI (FDSOI)-based transistors. In this paper, the mechanism of RTN in a 22-nm FDSOI-based metal-oxide-semiconductor field-effect transistor (MOSFET) is discussed, and an improved approach to analyzing the relationship between the RTN time constants, the trap energy, and the trap depth of the device at cryogenic temperatures is proposed. The cryogenic measurements of RTN in a 22-nm FDSOI-based MOSFET were carried out and analyzed using the improved approach. In this approach, the quantum mechanical effects and diffuse scattering of electrons at the oxide-silicon interface are considered, and the slope of the trap potential determined by the gate voltage relation is assumed to decrease proportionally with temperature as a result of the electron distribution inside the top silicon, per the technology computer-aided design (TCAD) simulations. The fitted results of the improved approach have good consistency with the measured curves at cryogenic temperatures from 10 K to 100 K. The fitted trap depth was 0.13 nm, and the decrease in the fitted correction coefficient of the electron distribution proportionally with temperature is consistent with the aforementioned assumption.
在新兴的基于工艺的晶体管中，随机电报噪声（RTN）已成为一个关键的可靠性问题。然而，传统的分析RTN特性的方法可能不适用于先进的绝缘体上硅（SOI）基晶体管，例如基于全耗尽SOI（FDSOI）的晶体管。本文讨论了基于22纳米FDSOI的金属氧化物半导体场效应晶体管（MOSFET）中RTN的机制，并提出了一种改进的方法来分析低温下该器件的RTN时间常数、陷阱能量和陷阱深度之间的关系。使用该改进方法对基于22纳米FDSOI的MOSFET中的RTN进行了低温测量和分析。在这种方法中，考虑了氧化物 - 硅界面处电子的量子力学效应和扩散散射，并且根据技术计算机辅助设计（TCAD）模拟，由于顶部硅内部的电子分布，由栅极电压关系确定的陷阱势斜率被假定与温度成比例降低。在10 K至100 K的低温下，改进方法的拟合结果与测量曲线具有良好的一致性。拟合的陷阱深度为0.13纳米，并且电子分布的拟合校正系数随温度成比例降低与上述假设一致。
