State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA.
Sci Rep. 2017 Aug 2;7(1):7126. doi: 10.1038/s41598-017-05771-6.
We report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts. The assembly of single-crystal FeGe nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Single FeGe nanowire devices were fabricated using e-beam lithography. Electronic transport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are likely signatures of the two spin density wave states in FeGe.
我们通过化学气相沉积法在没有任何催化剂的帮助下合成了单晶铁锗纳米线。具有四方 C16 晶体结构的单晶 FeGe 纳米线的组装表现出沿径向或生长轴向的各向异性磁行为，具有反铁磁和铁磁有序。使用电子束光刻技术制造了单个 FeGe 纳米线器件。这些器件中的电子输运测量显示出在 250 K 和 200 K 附近的两个电阻率异常，这可能是 FeGe 中两个自旋密度波态的特征。
