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利用石墨烯量子点实现光子回收，提升 GaN 基紫外发光二极管性能。

Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots.

机构信息

Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, 32023, Taiwan.

Department of Photonics, Research Center Energy Technology and Strategy, National Cheng Kung University, Tainan, 701, Taiwan.

出版信息

Sci Rep. 2017 Aug 2;7(1):7108. doi: 10.1038/s41598-017-07483-3.

DOI:10.1038/s41598-017-07483-3
PMID:28769094
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5541035/
Abstract

Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.

摘要

通过脉冲激光烧蚀制备了平均直径为 3.5nm 的石墨烯量子点（GQDs）。合成的 GQDs 可以显著提高 InGaN/InAlGaN 紫外发光二极管（LED）的光学和电学性能。在 LED 表面掺入 GQDs 后，观察到电致发光增强和串联电阻降低。随着 GQD 浓度的增加，LED 发出的光（串联电阻）相应增加（减少）。在引入浓度为 0.9mg/ml 的 GQDs 后，光输出功率实现了高达 71%的最大增加。引入 GQDs 后，LED 性能得到改善，这是通过从波导模式提取光和从 GQDs 到有源层的载流子转移进行光子回收来解释的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/1f339df14b7a/41598_2017_7483_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/ce30f8189b74/41598_2017_7483_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/1f19ab37874a/41598_2017_7483_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/df64d245c7e6/41598_2017_7483_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/7a5493b6d69b/41598_2017_7483_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/22a11d61323e/41598_2017_7483_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/978562e4b494/41598_2017_7483_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/f0988a2a99b2/41598_2017_7483_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/c137bc7e10bd/41598_2017_7483_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/67521a470dc4/41598_2017_7483_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/1f339df14b7a/41598_2017_7483_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/ce30f8189b74/41598_2017_7483_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/1f19ab37874a/41598_2017_7483_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/df64d245c7e6/41598_2017_7483_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/7a5493b6d69b/41598_2017_7483_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/22a11d61323e/41598_2017_7483_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/978562e4b494/41598_2017_7483_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/f0988a2a99b2/41598_2017_7483_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/c137bc7e10bd/41598_2017_7483_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/67521a470dc4/41598_2017_7483_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf60/5541035/1f339df14b7a/41598_2017_7483_Fig10_HTML.jpg

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本文引用的文献

1
Mechanism for excitation-dependent photoluminescence from graphene quantum dots and other graphene oxide derivates: consensus, debates and challenges.石墨烯量子点及其他氧化石墨烯衍生物的激发依赖型光致发光机制：共识、争论与挑战
Nanoscale. 2016 Apr 21;8(15):7794-807. doi: 10.1039/c6nr00605a.
2
Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots.采用石墨烯量子点对氮化镓外延层进行光致掺杂
Sci Rep. 2016 Mar 18;6:23260. doi: 10.1038/srep23260.
3
Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons.
通过宽带隙溶液法制备的p-MnO量子点功能化的GaN纳米线的增强紫外发射
ACS Appl Mater Interfaces. 2020 Jul 29;12(30):34058-34064. doi: 10.1021/acsami.0c07029. Epub 2020 Jul 17.
通过局域表面等离子体激元提高基于GaN的垂直型发光二极管的外量子效率。
Sci Rep. 2016 Mar 3;6:22659. doi: 10.1038/srep22659.
4
Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters.通过使用石墨烯量子点作为下转换器进行光子管理来提高硅异质结太阳能电池的效率。
Nano Lett. 2016 Jan 13;16(1):309-13. doi: 10.1021/acs.nanolett.5b03814. Epub 2015 Dec 28.
5
Amino-functionalized graphene quantum dots: origin of tunable heterogeneous photoluminescence.氨基功能化石墨烯量子点：可调谐异质光致发光的起源。
Nanoscale. 2014 Mar 21;6(6):3384-91. doi: 10.1039/c3nr05376h. Epub 2014 Feb 14.
6
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Opt Express. 2013 Nov 18;21(23):29025-30. doi: 10.1364/OE.21.029025.
7
Focusing on luminescent graphene quantum dots: current status and future perspectives.聚焦于发光石墨烯量子点：现状与未来展望。
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8
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Adv Mater. 2011 Feb 8;23(6):776-80. doi: 10.1002/adma.201003819. Epub 2010 Dec 15.