Shen Qiang, Ran Guang, Zhou Wei, Ye Chao, Feng Qijie, Li Ning
College of Energy, Xiamen University, Xiamen 361102, China.
China Academy of Engineering Physics, Mianyang 621900, China.
Materials (Basel). 2018 Feb 11;11(2):282. doi: 10.3390/ma11020282.
Light ion implantation is one of the important procedures of smart cut for SiC-based semiconductor fabrication. This work investigated the surface morphologies and microstructures of single crystal 6H-SiC irradiated by one or both of H₂⁺ and He⁺ ions at room temperature and then annealed at specific temperatures. Blisters evolved from the coalescence of H nanocracks were formed in the H₂⁺ and He⁺+H₂⁺ irradiated sample surface, while circular ripples originated from the pressure release of helium bubbles after high temperature annealing were formed in the He⁺ irradiated sample surface. The lateral radius of the blisters in the irradiated sample with low H₂⁺ fluence was larger than that in the irradiated sample with high H₂⁺ fluence and with He⁺+H₂⁺ ions. About 8-58% of implanted H atoms contributed to the formation of the blisters. Compared with other irradiated samples, the ratio of ₀/ and the density of the blisters in the He⁺+H₂⁺ irradiated samples were largest. The stress field of the blisters was simulated using finite element method and the inner pressure in the blisters was also calculated. The corresponding mechanism was analyzed and discussed.
轻离子注入是基于碳化硅的半导体制造中智能切割的重要工艺之一。本工作研究了在室温下用H₂⁺和He⁺离子之一或两者辐照单晶6H-SiC，然后在特定温度下退火后的表面形貌和微观结构。在H₂⁺和He⁺+H₂⁺辐照样品表面形成了由H纳米裂纹合并产生的气泡，而在He⁺辐照样品表面形成了高温退火后氦气泡压力释放产生的圆形波纹。低H₂⁺注量辐照样品中气泡的横向半径大于高H₂⁺注量和He⁺+H₂⁺离子辐照样品中的横向半径。约8 - 58%的注入H原子促成了气泡的形成。与其他辐照样品相比，He⁺+H₂⁺辐照样品中气泡的₀/比值和密度最大。采用有限元方法模拟了气泡的应力场，并计算了气泡内的压力。对相应的机理进行了分析和讨论。
