电化学沉积Bi₂Te₃和Sb₂Te₃热电材料厚膜的合成与评估

Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi₂Te₃ and Sb₂Te₃ Thermoelectric Materials.

作者信息

Trung Nguyen Huu, Sakamoto Kei, Toan Nguyen Van, Ono Takahito

机构信息

Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan.

Micro/Nano-Machining Education and Research Center, Tohoku University, Sendai 890-8579, Japan.

出版信息

Materials (Basel). 2017 Feb 10;10(2):154. doi: 10.3390/ma10020154.

DOI:10.3390/ma10020154

PMID:28772511

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5459149/

Abstract

This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi₂Te₃) and P-type antimony telluride (Sb₂Te₃), are performed and compared. As a result, highly oriented Bi₂Te₃ and Sb₂Te₃ thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi₂Te₃ and 500-µm-thick Sb₂Te₃ films are obtained. The Seebeck coefficients for the Bi₂Te₃ and Sb₂Te₃ films are -150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi₂Te₃ is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb₂Te₃. The power factors of each thermoelectric material can reach 15 × 10 W/mK² for Bi₂Te₃ and 11.2 × 10 W/mK² for Sb₂Te₃.

摘要

本文介绍了可用于热电发电机等应用的厚热电薄膜的合成与评估结果。对两种类型的电化学沉积方法进行了研究并比较，这两种方法分别是用于N型碲化铋（Bi₂Te₃）和P型碲化锑（Sb₂Te₃）的改进技术的恒流沉积和脉冲沉积。结果表明，成功合成了具有块状结构、高塞贝克系数和低电阻率的高度取向的Bi₂Te₃和Sb₂Te₃厚膜。获得了600微米厚的Bi₂Te₃薄膜和500微米厚的Sb₂Te₃薄膜。Bi₂Te₃和Sb₂Te₃薄膜的塞贝克系数分别为-150±20和170±20μV/K。此外，Bi₂Te₃的电阻率为15±5μΩm，Sb₂Te₃的电阻率为25±5μΩm。每种热电材料的功率因子对于Bi₂Te₃可达15×10 W/mK²，对于Sb₂Te₃可达11.2×10 W/mK²。