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多通道玻璃模板中p型Sb₂Te₃薄膜和微柱阵列的电沉积

Electrodeposition of p-Type Sb₂Te₃ Films and Micro-Pillar Arrays in a Multi-Channel Glass Template.

作者信息

Su Ning, Guo Shuai, Li Fu, Liu Dawei, Li Bo

机构信息

Graduate School of Shenzhen, Tsinghua University, Shenzhen 518065, China.

Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060, China.

出版信息

Materials (Basel). 2018 Jul 12;11(7):1194. doi: 10.3390/ma11071194.

Abstract

Antimony telluride (Sb₂Te₃)-based two-dimensional films and micro-pillar arrays are fabricated by electrochemical deposition from electrolytes containing SbO⁺ and HTeO₂⁺ on Si wafer-based Pt electrode and multi-channel glass templates, respectively. The results indicate that the addition of tartaric acid increases the solubility of SbO⁺ in acidic solution. The compositions of deposits depend on the electrolyte concentration, and the micro morphologies rely on the reduction potential. Regarding the electrolyte containing 8 mM of SbO⁺ and 12 mM of HTeO₂⁺, the grain size increases and the density of films decreases as the deposition potential shifts from -100 mV to -400 mV. Sb₂Te₃ film with nominal composition and dense morphology can be obtained by using a deposition potential of -300 mV. However, this condition is not suitable for the deposition of Sb₂Te₃ micro-pillar arrays on the multi-channel glass templates because of its drastic concentration polarization. Nevertheless, it is found that the pulsed voltage deposition is an effective way to solve this problem. A deposition potential of -280 mV and a dissolve potential of 500 mV were selected, and the deposition of micro-pillars in a large aspect ratio and at high density can be realized. The deposition technology can be further applied in the fabrication of micro-TEGs with large output voltage and power.

摘要

碲化锑(Sb₂Te₃)基二维薄膜和微柱阵列分别通过在基于硅片的铂电极和多通道玻璃模板上,从含有SbO⁺和HTeO₂⁺的电解质中进行电化学沉积制备而成。结果表明,酒石酸的添加增加了SbO⁺在酸性溶液中的溶解度。沉积物的成分取决于电解质浓度,微观形态则依赖于还原电位。对于含有8 mM SbO⁺和12 mM HTeO₂⁺的电解质,随着沉积电位从-100 mV变为-400 mV,晶粒尺寸增大,薄膜密度减小。通过使用-300 mV的沉积电位,可以获得具有标称成分和致密形态的Sb₂Te₃薄膜。然而,由于其剧烈的浓度极化,这种条件不适用于在多通道玻璃模板上沉积Sb₂Te₃微柱阵列。尽管如此,发现脉冲电压沉积是解决该问题的有效方法。选择-280 mV的沉积电位和500 mV的溶解电位,可以实现大长径比和高密度微柱的沉积。该沉积技术可进一步应用于制造具有高输出电压和功率的微型热电器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0dcb/6073536/6adcfd621c22/materials-11-01194-g001.jpg

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