Memarian Nafiseh, Rozati Seyeed Mohammad, Concina Isabella, Vomiero Alberto
Faculty of Physics, Semnan University, Semnan, 35131-19111, Iran.
Department of Physics, University of Guilan, Rasht 41335, Iran.
Materials (Basel). 2017 Jul 9;10(7):773. doi: 10.3390/ma10070773.
Nanocrystalline CdS thin films were grown on glass substrates by a thermal evaporation method in a vacuum of about 2 × 10 Torr at substrate temperatures ranging between 25 °C and 250 °C. The physical properties of the layers were analyzed by transmittance spectra, XRD, SEM, and four-point probe measurements, and exhibited strong dependence on substrate temperature. The XRD patterns of the films indicated the presence of single-phase hexagonal CdS with (002) orientation. The structural parameters of CdS thin films (namely crystallite size, number of grains per unit area, dislocation density and the strain of the deposited films) were also calculated. The resistivity of the as-deposited films were found to vary in the range 3.11-2.2 × 10⁴ Ω·cm, depending on the substrate temperature. The low resistivity with reasonable transmittance suggest that this is a reliable way to fine-tune the functional properties of CdS films according to the specific application.
采用热蒸发法在玻璃衬底上于约2×10托的真空环境中、衬底温度介于25℃至250℃之间生长了纳米晶CdS薄膜。通过透射光谱、X射线衍射（XRD）、扫描电子显微镜（SEM）和四点探针测量对这些薄膜层的物理性质进行了分析，结果表明其对衬底温度有很强的依赖性。薄膜的XRD图谱表明存在具有（002）取向的单相六方CdS。还计算了CdS薄膜的结构参数（即微晶尺寸、单位面积晶粒数、位错密度和沉积薄膜的应变）。发现沉积态薄膜的电阻率在3.11 - 2.2×10⁴Ω·cm范围内变化，这取决于衬底温度。低电阻率与合理的透射率表明，这是根据特定应用微调CdS薄膜功能特性的可靠方法。
