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用于模拟计算的纳米级 NbO 莫特忆阻器中的混沌动力学。

Chaotic dynamics in nanoscale NbO Mott memristors for analogue computing.

出版信息

Nature. 2017 Aug 17;548(7667):318-321. doi: 10.1038/nature23307. Epub 2017 Aug 9.

DOI:10.1038/nature23307
PMID:28792931
Abstract

At present, machine learning systems use simplified neuron models that lack the rich nonlinear phenomena observed in biological systems, which display spatio-temporal cooperative dynamics. There is evidence that neurons operate in a regime called the edge of chaos that may be central to complexity, learning efficiency, adaptability and analogue (non-Boolean) computation in brains. Neural networks have exhibited enhanced computational complexity when operated at the edge of chaos, and networks of chaotic elements have been proposed for solving combinatorial or global optimization problems. Thus, a source of controllable chaotic behaviour that can be incorporated into a neural-inspired circuit may be an essential component of future computational systems. Such chaotic elements have been simulated using elaborate transistor circuits that simulate known equations of chaos, but an experimental realization of chaotic dynamics from a single scalable electronic device has been lacking. Here we describe niobium dioxide (NbO) Mott memristors each less than 100 nanometres across that exhibit both a nonlinear-transport-driven current-controlled negative differential resistance and a Mott-transition-driven temperature-controlled negative differential resistance. Mott materials have a temperature-dependent metal-insulator transition that acts as an electronic switch, which introduces a history-dependent resistance into the device. We incorporate these memristors into a relaxation oscillator and observe a tunable range of periodic and chaotic self-oscillations. We show that the nonlinear current transport coupled with thermal fluctuations at the nanoscale generates chaotic oscillations. Such memristors could be useful in certain types of neural-inspired computation by introducing a pseudo-random signal that prevents global synchronization and could also assist in finding a global minimum during a constrained search. We specifically demonstrate that incorporating such memristors into the hardware of a Hopfield computing network can greatly improve the efficiency and accuracy of converging to a solution for computationally difficult problems.

摘要

目前,机器学习系统使用简化的神经元模型,这些模型缺乏生物系统中观察到的丰富非线性现象,而生物系统表现出时空协同动力学。有证据表明,神经元在一种称为混沌边缘的状态下运作,这种状态可能是大脑中复杂性、学习效率、适应性和模拟(非布尔)计算的核心。当神经网络在混沌边缘运行时,其计算复杂性会增强,而混沌元件的网络也被提出用于解决组合或全局优化问题。因此,能够纳入神经启发式电路的可控混沌行为的来源可能是未来计算系统的一个重要组成部分。这种混沌元件已经使用精细的晶体管电路进行了模拟,这些晶体管电路模拟了已知的混沌方程,但从单个可扩展电子设备中实现混沌动力学的实验尚未实现。在这里,我们描述了二氧化铌(NbO)莫特忆阻器,每个忆阻器的尺寸都小于 100 纳米,它们都表现出非线性传输驱动的电流控制负微分电阻和莫特转变驱动的温度控制负微分电阻。莫特材料具有随温度变化的金属-绝缘体转变,其充当电子开关,从而在器件中引入了依赖于历史的电阻。我们将这些忆阻器纳入弛豫振荡器中,并观察到可调谐的周期性和混沌自激振荡范围。我们表明,非线性电流传输与纳米尺度的热波动相结合会产生混沌振荡。通过引入伪随机信号来防止全局同步,这种忆阻器在某些类型的神经启发式计算中可能很有用,并且还可以在受约束搜索期间协助找到全局最小值。我们特别证明,将这种忆阻器纳入 Hopfield 计算网络的硬件中可以极大地提高收敛到计算困难问题解决方案的效率和准确性。

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