Chen Maolin, Ma Yinchang, Aslam Nabeel, Liu Chen, Chen Yiqiang, Luo Linqu, Zhang Xiaowen, Mai Kairan, Xiao Han, Zhu Kaichen, Alharbi Osamah, Zheng Dongxing, Xu Xiangming, Liao Hanguang, Yang Yiming, Wang Heng, Zhou Zhican, Wang Hanwen, Tian Bo, Li Junzhu, He Xin, Chang Kai, Wan Yating, Shamim Atif, Alshareef Husam N, Lanza Mario, Anthopoulos Thomas D, Han Zheng, Xue Fei, Zhang Xixiang
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.
Nanofabrication Core Lab (NCL), King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.
Nat Nanotechnol. 2025 Jul 31. doi: 10.1038/s41565-025-01991-4.
Photonic memristors based on two-dimensional materials are emerging as critical components for ultrascalable, energy-efficient artificial vision systems, integrating opto-sensing, data storage and processing capabilities. However, existing devices typically exhibit narrow spectral response ranges and operate in a single mode (for example, non-volatility), limiting their applications in complex computing scenarios. Here we introduce photonic memristor arrays based on a wafer-scale hexagonal boron nitride (hBN)/silicon (Si) heterostructure. These memristors are developed via in situ, low-temperature (250 °C), large-area growth of highly homogeneous hBN films on Si-based substrates. The devices exhibit opto-reconfigurability across a broad spectral range from ultraviolet to near infrared. By adjusting the incident laser power, the device can be reconfigured between non-resistive-switching, volatile and non-volatile modes. This light-induced reconfigurability is attributed to the formation of conductive filaments through interactions between hydrogen ions and photogenerated electrons within the engineered hBN/Si heterostructures. Furthermore, the photonic memristor features a switching ratio exceeding 10, retention time surpassing 40,000 s, endurance over 10 cycles and thermal stability up to 300 °C. These findings provide a scalable solution for developing integrated sensing-storage-computation artificial vision systems, fully compatible with sophisticated Si-based semiconductor technologies.
基于二维材料的光子忆阻器正成为超大规模、高能效人工视觉系统的关键组件，该系统集成了光传感、数据存储和处理能力。然而，现有器件通常表现出较窄的光谱响应范围，并且以单一模式（例如非易失性）运行，这限制了它们在复杂计算场景中的应用。在此，我们介绍基于晶圆级六方氮化硼（hBN）/硅（Si）异质结构的光子忆阻器阵列。这些忆阻器是通过在硅基衬底上原位、低温（250°C）、大面积生长高度均匀的hBN薄膜而开发的。该器件在从紫外到近红外的宽光谱范围内表现出光可重构性。通过调节入射激光功率，器件可以在非电阻开关、易失性和非易失性模式之间进行重构。这种光诱导的可重构性归因于在工程化的hBN/Si异质结构中氢离子与光生电子之间的相互作用形成了导电细丝。此外，该光子忆阻器的开关比超过10，保持时间超过40000秒，耐久性超过10个循环，热稳定性高达300°C。这些发现为开发集成传感-存储-计算人工视觉系统提供了一种可扩展的解决方案，该系统与先进的硅基半导体技术完全兼容。
