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Y 和 Nb 共掺杂 TiO 陶瓷的介电性能。

Dielectric properties of Y and Nb co-doped TiO ceramics.

机构信息

Laboratory of Functional Materials, College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China.

Henan Key Laboratory of Photovoltaic Materials, Xinxiang, 453007, China.

出版信息

Sci Rep. 2017 Aug 17;7(1):8517. doi: 10.1038/s41598-017-09141-0.

DOI:10.1038/s41598-017-09141-0
PMID:28819129
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5561205/
Abstract

In this work, the (YNb)TiO (x = 0.001, 0.01, 0.02, 0.04, 0.06 and 0.1) ceramics (as called YNTO) were fabricated by synthesized through a standard solid-state reaction. As revealed by the X-ray diffraction (XRD) spectra, the YNTOs exhibit tetragonal rutile structure. Meanwhile, the grain size of YNTO ceramics increased and then decreased with the increase of x value, and the largest value reached when x = 0.02. All the YNTO samples display colossal permittivity (~10-10) over a wide temperature and frequency range. Moreover, the optimal ceramic, (YNb)TiO, exhibits high performance over a broad temperature range from 20 °C to 180 °C; specifically, at 1 kHz, the dielectric constant and dielectric loss are 6.55 × 10 and 0.22 at room temperature, and they are 1.03 × 10 and 0.11 at 180 °C, respectively.

摘要

在这项工作中,通过标准的固态反应合成了(YNb)TiO(x=0.001、0.01、0.02、0.04、0.06 和 0.1)陶瓷(称为 YNTO)。X 射线衍射(XRD)谱表明,YNTO 具有四方金红石结构。同时,YNTO 陶瓷的晶粒尺寸随 x 值的增加先增大后减小,当 x=0.02 时达到最大值。所有 YNTO 样品在宽温度和频率范围内均表现出巨大的介电常数(~10-10)。此外,最佳陶瓷(YNb)TiO 在 20°C 至 180°C 的宽温度范围内表现出优异的性能;具体来说,在 1kHz 时,室温下的介电常数和介电损耗分别为 6.55×10 和 0.22,在 180°C 时分别为 1.03×10 和 0.11。

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ACS Appl Mater Interfaces. 2015 Nov 18;7(45):25321-5. doi: 10.1021/acsami.5b07467. Epub 2015 Nov 6.
2
Origin of colossal permittivity in (In1/2Nb1/2)TiO2via broadband dielectric spectroscopy.通过宽带介电谱研究(In1/2Nb1/2)TiO2中巨介电常数的起源
Phys Chem Chem Phys. 2015 Sep 21;17(35):23132-9. doi: 10.1039/c5cp02741a.
3
Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics.
(铌+铟)共掺杂二氧化钛陶瓷中晶界电容效应影响巨介电常数的证据。
Sci Rep. 2015 Feb 6;5:8295. doi: 10.1038/srep08295.
4
Electron-pinned defect-dipoles for high-performance colossal permittivity materials.用于高性能巨介电材料的电子钉扎缺陷偶极子。
Nat Mater. 2013 Sep;12(9):821-6. doi: 10.1038/nmat3691. Epub 2013 Jun 30.
5
Giant dielectric permittivity observed in Li and Ti doped NiO.在锂和钛掺杂的氧化镍中观察到的巨大介电常数。
Phys Rev Lett. 2002 Nov 18;89(21):217601. doi: 10.1103/PhysRevLett.89.217601. Epub 2002 Oct 30.