Institute of Photonics, University of Eastern Finland, FI-80101, Joensuu, Finland.
Department of Electronics and Nanoengineering, Aalto University, FI-00076, Aalto, Finland.
Sci Rep. 2017 Aug 17;7(1):8561. doi: 10.1038/s41598-017-09308-9.
We propose direct synthesis of ultra-thin graphitic films on a dielectric substrate using sacrificial Ni catalyst layer, which significantly increases the crystallinity of the photoresist pyrolyzed at the temperature of 800 °C and above. A considerable amount of multilayer graphene in the photoresist film pyrolyzed in the presence of the Ni catalyst gives rise to an enhancement of the Raman signal of dye Sudan III molecules deposited on the substrate. We demonstrate comparable enhancement of the Raman signal from Sudan III molecules deposited on the fabricated graphitic substrate and those deposited on graphene, which was conventionally transferred to the silica substrate.
我们提出了一种在介电基底上使用牺牲镍催化剂层直接合成超薄石墨薄膜的方法，该方法显著提高了在 800°C 及以上温度下热解光刻胶的结晶度。在 Ni 催化剂存在下热解的光刻胶中存在大量多层石墨烯，导致沉积在基底上的染料苏丹 III 分子的 Raman 信号增强。我们证明了沉积在制备的石墨基底上的苏丹 III 分子的 Raman 信号的增强与那些沉积在传统转移到二氧化硅基底上的石墨烯上的信号相当。
