School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Republic of Korea.
Nat Commun. 2012 Jan 24;3:645. doi: 10.1038/ncomms1650.
Large-area graphene films are best synthesized via chemical vapour and/or solid deposition methods at elevated temperatures (~1,000 °C) on polycrystalline metal surfaces and later transferred onto other substrates for device applications. Here we report a new method for the synthesis of graphene films directly on SiO(2)/Si substrates, even plastics and glass at close to room temperature (25-160 °C). In contrast to other approaches, where graphene is deposited on top of a metal substrate, our method invokes diffusion of carbon through a diffusion couple made up of carbon-nickel/substrate to form graphene underneath the nickel film at the nickel-substrate interface. The resulting graphene layers exhibit tunable structural and optoelectronic properties by nickel grain boundary engineering and show micrometre-sized grains on SiO(2) surfaces and nanometre-sized grains on plastic and glass surfaces. The ability to synthesize graphene directly on non-conducting substrates at low temperatures opens up new possibilities for the fabrication of multiple nanoelectronic devices.
大面积石墨烯薄膜最好通过化学气相沉积和/或在高温（~1000°C）下在多晶金属表面上的固态沉积方法合成，然后转移到其他基底上用于器件应用。在这里，我们报告了一种在 SiO2/Si 基底上、甚至在塑料和玻璃上直接合成石墨烯薄膜的新方法，其温度接近室温（25-160°C）。与其他方法不同，在这些方法中，石墨烯沉积在金属基底的顶部，我们的方法通过由碳-镍/基底组成的扩散偶使碳扩散，从而在镍膜下方、在镍-基底界面处形成石墨烯。通过镍晶界工程，所得到的石墨烯层表现出可调谐的结构和光电特性，并在 SiO2 表面上显示出微米级的晶粒，在塑料和玻璃表面上显示出纳米级的晶粒。在低温下直接在非导体基底上合成石墨烯为制造多种纳米电子器件开辟了新的可能性。
