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ZnO/RuO肖特基二极管的可逆势垒开关

Reversible Barrier Switching of ZnO/RuO Schottky Diodes.

作者信息

Wendel Philipp, Dietz Dominik, Deuermeier Jonas, Klein Andreas

机构信息

Institute of Materials Science, Technical University of Darmstadt, 64287 Darmstadt, Germany.

i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Campus de Caparica, Universidade NOVA de Lisboa and CEMOP/UNINOVA, 2829-516 Caparica, Portugal.

出版信息

Materials (Basel). 2021 May 20;14(10):2678. doi: 10.3390/ma14102678.

DOI:10.3390/ma14102678
PMID:34065310
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8161001/
Abstract

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

摘要

通过磁控溅射制备的ZnO/RuO2肖特基二极管的电流-电压特性表现出可逆的滞后行为，这对应于在电压循环时肖特基势垒高度在0.9至1.3 eV之间的变化。势垒高度的变化归因于氧空位中电子的俘获和去俘获。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/91dd/8161001/c48da5a35602/materials-14-02678-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/91dd/8161001/c48da5a35602/materials-14-02678-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/91dd/8161001/c48da5a35602/materials-14-02678-g001.jpg

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本文引用的文献

1
Research progress on solutions to the sneak path issue in memristor crossbar arrays.忆阻器交叉阵列中潜通路问题解决方案的研究进展
Nanoscale Adv. 2020 Mar 11;2(5):1811-1827. doi: 10.1039/d0na00100g. eCollection 2020 May 19.
2
Memory devices and applications for in-memory computing.用于内存计算的存储设备和应用。
Nat Nanotechnol. 2020 Jul;15(7):529-544. doi: 10.1038/s41565-020-0655-z. Epub 2020 Mar 30.
3
Electrical Properties of Low-Temperature Processed Sn-Doped InO Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping.
低温处理的掺锡氧化铟薄膜的电学性质：微观结构和氧含量的作用以及缺陷调制掺杂的潜力。
Materials (Basel). 2019 Jul 11;12(14):2232. doi: 10.3390/ma12142232.
4
Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from InO.n型氧化物半导体上高性能肖特基接触的处理策略：来自氧化铟的见解。
ACS Appl Mater Interfaces. 2019 Jul 31;11(30):27073-27087. doi: 10.1021/acsami.9b06455. Epub 2019 Jul 22.
5
Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.基于氧化铁和氧化石墨烯杂化的自修正双极电阻式随机存取存储器。
Nanoscale. 2017 Oct 19;9(40):15314-15322. doi: 10.1039/c7nr01840a.
6
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application.具有非对称编程电压的低功耗、自修复、无形成的忆阻器，适用于高密度交叉点应用。
Nano Lett. 2016 Nov 9;16(11):6724-6732. doi: 10.1021/acs.nanolett.6b01781. Epub 2016 Oct 17.
7
Progress in piezotronics and piezo-phototronics.压电器件学与光电器件学的进展。
Adv Mater. 2012 Sep 4;24(34):4632-46. doi: 10.1002/adma.201104365. Epub 2012 Feb 14.
8
Intrinsic n-type behavior in transparent conducting oxides: a comparative hybrid-functional study of In2O3, SnO2, and ZnO.本征 n 型行为在透明导电氧化物中：In2O3、SnO2 和 ZnO 的比较杂化泛函研究。
Phys Rev Lett. 2009 Dec 11;103(24):245501. doi: 10.1103/PhysRevLett.103.245501.