Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiN/n⁺ Si and Ni/SiN/n Si resistive-switching random access memory devices. The Ni/SiN/n Si device's Si bottom electrode had a higher dopant concentration (As ion > 10 cm) than the Ni/SiN/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 10 cm), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.