Fedotov Mikhail, Korotitsky Viktor, Koveshnikov Sergei
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Science (IMT RAS), 6 Academician Ossipyan Str., Moscow District, Chernogolovka 142432, Russia.
Nanomaterials (Basel). 2024 Apr 12;14(8):668. doi: 10.3390/nano14080668.
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications. For these applications, RRAM elements are arranged into Crossbar arrays, where rectifying selector devices are required for correct read operation of the memory cells. One of the key advantages of RRAM is its high scalability due to the filamentary mechanism of resistive switching, as the cell conductivity is not dependent on the cell area. Thus, a selector device becomes a limiting factor in Crossbar arrays in terms of scalability, as its area exceeds the minimal possible area of an RRAM cell. We propose a tunnel diode selector, which is self-aligned with an RRAM cell and, thus, occupies the same area. In this study, we address the theoretical and modeling aspects of creating a self-aligned selector with optimal parameters to avoid any deterioration of RRAM cell performance. We investigate the possibilities of using a tunnel diode based on single- and double-layer dielectrics and determine their optimal physical properties to be used in an HfOx-based RRAM Crossbar array.
电阻式随机存取存储器（RRAM）是下一代大规模存储阵列、模拟神经形态计算和节能片上系统应用的关键元件。对于这些应用，RRAM元件被排列成交叉阵列，其中需要整流选择器器件来正确读取存储单元。RRAM的关键优势之一是由于电阻切换的丝状机制而具有高可扩展性，因为单元电导率不依赖于单元面积。因此，就可扩展性而言，选择器器件成为交叉阵列中的限制因素，因为其面积超过了RRAM单元的最小可能面积。我们提出一种隧道二极管选择器，它与RRAM单元自对准，因此占用相同面积。在本研究中，我们探讨了创建具有最佳参数的自对准选择器以避免RRAM单元性能任何恶化的理论和建模方面。我们研究了使用基于单层和双层电介质的隧道二极管的可能性，并确定其在基于HfOx的RRAM交叉阵列中使用的最佳物理特性。
