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通过紫外光光电离在硅(100)氢化物上嫁接开环环丙胺薄膜。

Grafting of Ring-Opened Cyclopropylamine Thin Films on Silicon (100) Hydride via UV Photoionization.

机构信息

College of Arts and Sciences, University of North Carolina (UNC) at Chapel Hill , Chapel Hill, North Carolina 27514, United States.

Institute of New Drug Development, China Medical University , No. 91 Hsueh-Shih Road, Taichung 40402, Taiwan, Republic of China.

出版信息

ACS Appl Mater Interfaces. 2017 Sep 13;9(36):31083-31094. doi: 10.1021/acsami.7b08343. Epub 2017 Aug 31.

Abstract

The grafting of cyclopropylamine onto a silicon (100) hydride (Si-H) surface via a ring-opening mechanism using UV photoionization is described here. In brief, radicals generated from the Si-H surface upon UV irradiation were found to behave in classical hydrogen abstraction theory manner by which the distal amine group was first hydrogen abstracted and the radical propagated down to the cyclopropane moiety. This subsequently liberated the strained bonds of the cyclopropane group and initiated the surface grafting process, producing a thin film approximately 10-15 nm in height. Contact angle measurements also showed that such photoionization irradiation had yielded an extremely hydrophilic surface (∼21.3°) and X-ray photoelectron spectroscopy also confirmed the coupling was through the Si-C linkage. However, when the surface underwent high-temperature hydrosilylation (>160 °C), the reaction proceeded predominantly through the nucleophilic NH group to form a Si-N linkage to the surface. This rendered the surface hydrophobic and hence suggested that the Si-H homolysis model may not be the main process. To the best of our knowledge, this was the first attempt reported in the literature to use photoionization to directly graft cyclopropylamine onto a silicon surface and in due course generate a highly rich NH-terminated surface that was found to be highly bioactive in promoting cell viability on the basis of 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide studies.

摘要

本文描述了通过环开机制使用紫外光光致电离将环丙胺接枝到硅(100)氢化物(Si-H)表面上的过程。简而言之,在紫外光照射下,Si-H 表面产生的自由基表现出经典的氢提取理论行为,其中首先提取远端胺基,自由基向下传播到环丙烷部分。这随后释放了环丙烷基团的应变键,并引发了表面接枝过程,产生了大约 10-15nm 高的薄膜。接触角测量也表明,这种光致电离辐照产生了极其亲水的表面(∼21.3°),X 射线光电子能谱也证实了键合是通过 Si-C 键合。然而,当表面经历高温硅氢化反应(>160°C)时,反应主要通过亲核 NH 基团进行,通过 Si-N 键合到表面。这使表面疏水,因此表明 Si-H 均裂模型可能不是主要过程。据我们所知,这是首次尝试在文献中使用光致电离直接将环丙胺接枝到硅表面上,并在适当的条件下生成高度丰富的 NH 末端表面,基于 3-(4,5-二甲基噻唑-2-基)-2,5-二苯基四氮唑溴化物研究发现,该表面在促进细胞活力方面具有高度生物活性。

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