Department of Materials Science and Engineering , Kyoto University , Yoshida-Hommachi , Sakyo-ku, Kyoto 606-8501 , Japan.
Chemistry Department, Faculty of Science , Assiut University , Assiut 71516 , Egypt.
Langmuir. 2018 Nov 6;34(44):13162-13170. doi: 10.1021/acs.langmuir.8b02717. Epub 2018 Oct 24.
This work describes the UV alkoxylation of a series of 1,2-epoxyalkanes on the hydrogen-terminated silicon (H-Si) substrate. The formation of alkoxy self-assembled monolayers (SAMs) and the nature of bonding at the surface of H-Si were examined using water contact angle goniometer, spectroscopic ellipsometer, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy. UV exposure to 1,2-epoxyalkane mesitylene solution for 60 min formed alkoxy-SAMs onto H-Si with hydrophobic properties. The local molecular environment of the alkyl chains transitioned from a disordered, liquid-like state to an ordered, crystalline-like structure with increasing the chain length. XPS and FTIR indicated that the reaction of H-Si with 1,2-epoxyalkane produced Si-O-C linkages. The Si-H bond homolysis and electron/hole were the plausible mechanistic routes for the grafting of 1,2-epoxyalkanes.
本工作描述了一系列 1,2-环氧化烷在氢终止的硅(H-Si)基底上的紫外烷氧基化。使用水接触角测角仪、光谱椭圆偏振仪、傅里叶变换红外光谱(FTIR)、X 射线光电子能谱(XPS)和原子力显微镜研究了烷氧基自组装单层(SAM)的形成以及 H-Si 表面的键合性质。将 1,2-环氧化烷均三甲苯溶液暴露于紫外线下 60 分钟,可在 H-Si 上形成具有疏水性的烷氧基-SAMs。随着链长的增加,烷基链的局部分子环境从无序的液态转变为有序的晶态。XPS 和 FTIR 表明 H-Si 与 1,2-环氧化烷反应生成 Si-O-C 键。Si-H 键均裂和电子/空穴可能是 1,2-环氧化烷接枝的机制途径。