Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, 999077, P. R. China.
Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China.
Adv Mater. 2017 Oct;29(38). doi: 10.1002/adma.201700704. Epub 2017 Aug 21.
The controlled synthesis of MoTe and WTe is crucial for their fundamental research and potential electronic applications. Here, a simplified ambient-pressure chemical vapor deposition (CVD) strategy is developed to synthesize high-quality and large-scale monolayer and few-layer 1T'-phase MoTe (length ≈ 1 mm) and WTe (length ≈ 350 µm) crystals by using ordinary salts (KCl or NaCl) as the growth promoter combining with low-cost (NH ) Mo O ·4H O and hydrate (NH ) W O ·xH O as the Mo and W sources, respectively. Atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy confirm the high-quality nature and the atomic structure of the as-grown 1T' MoTe and WTe flakes. Variable-temperature transport measurements exhibit their semimetal properties. Furthermore, near-field nanooptical imaging studies are performed on the 1T' MoTe and WTe flakes for the first time. The sub-wavelength effects of 1T'-phase MoTe (λ ≈ 140 nm) and WTe (λ ≈ 100 nm) are obtained. This approach paves the way for the growth of special transition-metal dichalcogenides materials and boosts the future polaritonic research of 2D telluride compounds.
过渡金属二卤族化合物的控制合成对于它们的基础研究和潜在的电子应用至关重要。在这里,我们开发了一种简化的常压化学气相沉积(CVD)策略,使用普通盐(KCl 或 NaCl)作为生长促进剂,结合低成本的(NH 4 ) 2 MoO 4 ·4H 2 O 和水合物(NH 4 ) 6 W 7 O 24 ·xH 2 O 分别作为 Mo 和 W 的源,合成高质量和大尺寸的单层和少层 1T'-相 MoTe(长度≈1mm)和 WTe(长度≈350μm)晶体。原子力显微镜、X 射线光电子能谱、拉曼光谱和透射电子显微镜证实了所生长的 1T' MoTe 和 WTe 薄片的高质量和原子结构。变温输运测量表现出它们的半导体性质。此外,我们首次对 1T' MoTe 和 WTe 薄片进行了近场纳米光学成像研究。获得了 1T'-相 MoTe(λ≈140nm)和 WTe(λ≈100nm)的亚波长效应。这种方法为特殊过渡金属二卤族化合物材料的生长铺平了道路,并推动了二维碲化物化合物的未来极化激元研究。