Analytical, Spectroscopy and Ceramics Group, Vikram Sarabhai Space Centre , Thiruvananthapuram 695022, Kerala, India.
ACS Nano. 2017 Sep 26;11(9):8892-8900. doi: 10.1021/acsnano.7b03129. Epub 2017 Sep 5.
We report on the synthesis, characterization, and application of TiN (MXene), a two-dimensional transition metal nitride of MX type. Synthesis of nitride-based MXenes (MN) is difficult due to their higher formation energy from MAN and poor stability of MN layers in the etchant employed, typically HF. Herein, the selective etching of Al from ternary layered transition metal nitride TiAlN (MAX) and intercalation were achieved by immersing the powder in a mixture of potassium fluoride and hydrochloric acid. The multilayered TiNT (T is the surface termination) obtained was sonicated in DMSO and centrifuged to obtain few-layered TiNT. MXene formation was verified, and the material was completely characterized by Raman spectroscopy, XRD, XPS, FESEM-EDS, TEM, STM, and AFM techniques. Surface-enhanced Raman scattering (SERS) activity of the synthesized TiNT was investigated by fabricating paper, silicon, and glass-based SERS substrates. A Raman enhancement factor of 10 was demonstrated using rhodamine 6G as the model compound with 532 nm excitation wavelength. Detection of trace level explosives with a simple paper-based SERS substrate with TiN (MXene) as active material was also illustrated.
我们报告了 TiN(MXene)的合成、表征和应用,TiN 是 MX 型二维过渡金属氮化物。由于氮化物 MXenes(MN)的形成能较高,且在所用蚀刻剂(通常为 HF)中 MN 层的稳定性较差,因此合成氮化物基 MXenes(MN)较为困难。本文通过将粉末浸入氟化钾和盐酸的混合物中,实现了从三元层状过渡金属氮化物 TiAlN(MAX)中选择性蚀刻 Al 并进行插层。所得的多层 TiNT(T 是表面终止基团)在 DMSO 中进行超声处理,并通过离心获得少层 TiNT。通过 Raman 光谱、XRD、XPS、FESEM-EDS、TEM、STM 和 AFM 技术验证了 MXene 的形成,并对该材料进行了完全表征。通过制备纸张、硅和玻璃基 SERS 基底,研究了合成的 TiNT 的表面增强拉曼散射(SERS)活性。使用 532nm 激发波长的罗丹明 6G 作为模型化合物,证明了拉曼增强因子为 10。还说明了使用 TiN(MXene)作为活性材料的简单纸张基 SERS 基底对痕量爆炸物的检测。