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用扫描电子显微镜中的电子通道衬度成像对位错进行特征分析的衍射的基础和实验方面。

Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope.

机构信息

Laboratoire d'Étude des Microstructures et de Mécanique des Matériaux (LEM3), UMR CNRS 7239, University of Lorraine, 57045, Metz Cedex 01, France.

出版信息

Sci Rep. 2017 Aug 29;7(1):9742. doi: 10.1038/s41598-017-09756-3.

Abstract

Nowadays Field Emission Gun-Scanning Electron Microscopes provide detailed crystallographic information with high spatial and angular resolutions, and allow direct observation of crystalline defects, such as dislocations, through an attractive technique called Electron Channeling Contrast Imaging (ECCI). Dislocations play a crucial role in the properties of materials and ECCI has naturally emerged as an adapted tool for characterizing defects in bulk specimen. Nevertheless, fine control of the channeling conditions is absolutely required to get strong dislocation contrast for achieving comprehensive analysis. In this work, experiment-assisted fundamental aspects of the origin of dislocation contrast are studied. Experimentally, the potential of ECCI is explored in several dislocation configurations in Interstitial-Free steel (Fe - 1% Si) used as a model material. Full interpretations of dislocation contrast in (g, -g) and its evolution along the Kikuchi band are shown. Furthermore, a dislocation dipole is observed and fully characterized for the first time in an SEM.

摘要

如今,场发射枪扫描电子显微镜提供了具有高空间和角度分辨率的详细晶体学信息,并通过一种称为电子通道衬度成像(ECCI)的有吸引力的技术允许直接观察晶体缺陷,如位错。位错在材料性能中起着至关重要的作用,ECCI 自然成为了一种用于表征体样品缺陷的适应工具。然而,为了获得强位错对比度以实现全面分析,必须对通道条件进行精细控制。在这项工作中,研究了位错对比度起源的实验辅助基础方面。在实验中,探索了 ECCI 在用作模型材料的无间隙钢(Fe-1%Si)中的几种位错配置中的潜力。显示了(g,-g)中的位错对比度的完整解释及其沿菊池带的演变。此外,首次在 SEM 中观察到并全面表征了位错偶极子。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6beb/5575337/4faf53f33ac2/41598_2017_9756_Fig1_HTML.jpg

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