Kriaa Hana, Guitton Antoine, Maloufi Nabila
Université de Lorraine ⁻ CNRS ⁻ Arts et Métiers ParisTech ⁻ LEM3, 7 rue Félix Savart, 57070 Metz, France.
Laboratory of Excellence on Design of Alloy Metals for low-mAss Structures (DAMAS) ⁻ Université de Lorraine, 57073 Metz, France.
Materials (Basel). 2019 May 15;12(10):1587. doi: 10.3390/ma12101587.
Electron Channeling Contrast Imaging (ECCI) is becoming a powerful tool in materials science for characterizing deformation defects. Dislocations observed by ECCI in scanning electron microscope exhibit several features depending on the crystal orientation relative to the incident beam (white/black line on a dark/bright background). In order to bring new insights concerning these contrasts, we report an original theoretical approach based on the dynamical diffraction theory. Our calculations led, for the first time, to an explicit formulation of the back-scattered intensity as a function of various physical and practical parameters governing the experiment. Intensity profiles are modeled for dislocations parallel to the sample surface for different channeling conditions. All theoretical predictions are consistent with experimental results.
电子通道衬度成像（ECCI）正成为材料科学中用于表征变形缺陷的一种强大工具。在扫描电子显微镜中通过ECCI观察到的位错表现出若干特征，这些特征取决于晶体相对于入射束的取向（暗/亮背景上的白/黑线）。为了对这些衬度提供新的见解，我们报告了一种基于动态衍射理论的原创理论方法。我们的计算首次得出了背散射强度作为控制实验的各种物理和实际参数的函数的明确表达式。针对不同通道条件下与样品表面平行的位错，对强度分布进行了建模。所有理论预测均与实验结果一致。
