Crimp Martin A
Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48823, USA.
Microsc Res Tech. 2006 May;69(5):374-81. doi: 10.1002/jemt.20293.
The imaging and characterization of dislocations is commonly carried out by thin foil transmission electron microscopy (TEM) using diffraction contrast imaging. However, the thin foil approach is limited by difficult sample preparation, thin foil artifacts, relatively small viewable areas, and constraints on carrying out in situ studies. Electron channeling imaging of electron channeling contrast imaging (ECCI) offers an alternative approach for imaging crystalline defects, including dislocations. Because ECCI is carried out with field emission gun scanning electron microscope (FEG-SEM) using bulk specimens, many of the limitations of TEM thin foil analysis are overcome. This paper outlines the development of electron channeling patterns and channeling imaging to the current state of the art. The experimental parameters and set up necessary to carry out routine channeling imaging are reviewed. A number of examples that illustrate some of the advantages of ECCI over thin foil TEM are presented along with a discussion of some of the limitations on carrying out channeling contrast analysis of defect structures.
位错的成像和表征通常通过使用衍射衬度成像的薄箔透射电子显微镜（TEM）来进行。然而，薄箔方法受到样品制备困难、薄箔伪像、相对较小的可视区域以及进行原位研究的限制。电子通道对比成像（ECCI）的电子通道成像为包括位错在内的晶体缺陷成像提供了一种替代方法。由于ECCI是使用块状样品通过场发射枪扫描电子显微镜（FEG-SEM）进行的，因此克服了TEM薄箔分析的许多局限性。本文概述了电子通道图案和通道成像发展到当前技术水平的情况。回顾了进行常规通道成像所需的实验参数和设置。给出了一些示例，说明了ECCI相对于薄箔TEM的一些优点，并讨论了对缺陷结构进行通道对比分析的一些局限性。
