Department of Chemistry, National (Taiwan) University, Taipei, 106, Taiwan.
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Angew Chem Int Ed Engl. 2017 Oct 23;56(44):13650-13654. doi: 10.1002/anie.201706860. Epub 2017 Sep 26.
All inorganic CsPbBr perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot-injection method to partially replace the toxic Pb with highly stable Sn . Meanwhile, the absolute photoluminescence quantum yield of CsPb Sn Br increased from 45 % to 83 % with Sn substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr and CsPb Sn Br QDs at various excitation fluences were determined by femtosecond transient absorption, time-resolved photoluminescence, and single-dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb Sn Br QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m , a current efficiency of 11.63 cd A , an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w , and a low turn-on voltage of 3.6 V, which are the best values among reported tin-based perovskite quantum-dot LEDs.
所有无机 CsPbBr 钙钛矿量子点（QDs）都是电致发光显示器的潜在发射器。我们开发了一种简便的热注射方法，部分用高度稳定的 Sn 替代有毒的 Pb。同时，Sn 取代使 CsPbSnBr 的绝对光致发光量子产率从 45%增加到 83%。通过飞秒瞬态吸收、时间分辨光致发光和单分子光谱，确定了未掺杂 CsPbBr 和 CsPbSnBr QD 在不同激发强度下的瞬态吸收（TA）激子动力学，为 Sn 掺杂抑制三重态生成提供了明确的证据。这些高发光的 CsPbSnBr QD 发出 517nm 的光。基于这些 QD 的器件表现出 12500cd/m 的亮度、11.63cd/A 的电流效率、4.13%的外量子效率、6.76lm/W 的功率效率和 3.6V 的低开启电压，这是已报道的锡基钙钛矿量子点 LED 中的最佳值。
