Ullah Fateh, Fredj Zina, Sawan Mohamad
Center of Excellence in Biomedical Research on Advanced Integrated-on-Chips Neurotechnologies (CenBRAIN Neurotech), School of Engineering, Westlake University, Hangzhou 310024, China.
Nanomaterials (Basel). 2025 Jun 5;15(11):873. doi: 10.3390/nano15110873.
Perovskite quantum dots (PVK QDs) are gaining significant attention as potential materials for next-generation memory devices leveraged by their ion dynamics, quantum confinement, optoelectronic synergy, bandgap tunability, and solution-processable fabrication. In this review paper, we explore the fundamental characteristics of organic/inorganic halide PVK QDs and their role in resistive switching memory architectures. We provide an overview of halide PVK QDs synthesis techniques, switching mechanisms, and recent advancements in memristive applications. Special emphasis is placed on the ionic migration and charge trapping phenomena governing resistive switching, along with the prospects of photonic memory devices that leverage the intrinsic photosensitivity of PVK QDs. Despite their advantages, challenges such as stability, scalability, and environmental concerns remain critical hurdles. We conclude this review with insights into potential strategies for enhancing the reliability and commercial viability of PVK QD-based memory technologies.
钙钛矿量子点（PVK QDs）作为下一代存储器件的潜在材料正受到广泛关注，这得益于其离子动力学、量子限域、光电协同、带隙可调性以及可溶液加工制备等特性。在这篇综述论文中，我们探讨了有机/无机卤化物PVK QDs的基本特性及其在电阻式开关存储器架构中的作用。我们概述了卤化物PVK QDs的合成技术、开关机制以及忆阻应用的最新进展。特别强调了控制电阻式开关的离子迁移和电荷俘获现象，以及利用PVK QDs固有光敏性的光子存储器件的前景。尽管它们具有优势，但稳定性、可扩展性和环境问题等挑战仍然是关键障碍。我们在这篇综述的结尾深入探讨了提高基于PVK QD的存储技术的可靠性和商业可行性的潜在策略。
