用于倒置发光二极管应用的 CsPbBr/CdS 核/壳结构量子点
CsPbBr/CdS Core/Shell Structure Quantum Dots for Inverted Light-Emitting Diodes Application.
作者信息
Tang Xiaosheng, Yang Jie, Li Shiqi, Chen Weiwei, Hu Zhiping, Qiu Jing
机构信息
Key Laboratory of Optoelectronic Technology and Systems, College of Optoelectronic Engineering, Chongqing University, Ministry of Education, Chongqing, China.
出版信息
Front Chem. 2019 Jul 12;7:499. doi: 10.3389/fchem.2019.00499. eCollection 2019.
Novel CsPbBr/CdS core/shell structure quantum dots (QDs) were successfully synthesized using a facile hot-injection method. The corresponding CsPbBr/CdS QDs based light-emitting diodes (QLEDs) were further prepared, which demonstrated the maximum luminance of 354 cd/m and an external quantum efficiency (EQE) of 0.4% with the current efficiency (CE) of 0.3 cd/A. Moreover, the optoelectronic performance of the CsPbBr/CdS QDs based QLEDs exhibited a comparable enhancement in contrast to the pure CsPbBr QDs based QLEDs. Hypothetically, the novel CsPbBr/CdS structure QDs introduced one new route for advanced light emission applications of perovskite materials.
采用简便的热注入法成功合成了新型CsPbBr/CdS核壳结构量子点（QDs）。进一步制备了相应的基于CsPbBr/CdS量子点的发光二极管（QLED），其最大亮度为354 cd/m，外量子效率（EQE）为0.4%，电流效率（CE）为0.3 cd/A。此外，与纯CsPbBr量子点基QLED相比，基于CsPbBr/CdS量子点的QLED的光电性能有了相当程度的提高。据推测，新型CsPbBr/CdS结构量子点为钙钛矿材料的先进发光应用开辟了一条新途径。
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