Li Caihong, Zhu Juntong, Du Wen, Huang Yixuan, Xu Hao, Zhai Zhengang, Zou Guifu
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
the College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China.
Nanoscale Res Lett. 2021 Jul 31;16(1):123. doi: 10.1186/s11671-021-03581-4.
Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS/WS heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 10 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.
单层过渡金属二硫属化物（TMDs）由于具有出色的光捕获和光探测能力，在下一代光电子学领域展现出了广阔的应用潜力。光电探测器作为传感、成像和通信系统的重要组成部分，能够感知光信号并将其转换为电信号。在此，通过一步液相化学气相沉积法合成了大面积、高质量的横向单层MoS/WS异质结。系统的表征测量证实了沟道材料具有良好的均匀性和清晰的界面。因此，通过光门效应增强的光电探测器能够展现出具有竞争力的性能，包括约567.6 A/W的响应度和约7.17×10琼斯的探测率。此外，从电流功率谱获得的1/f噪声不利于光电探测器的发展，这被认为源于电荷载流子的捕获/脱捕获。因此，这项工作可能有助于基于横向单层TMD异质结构的高效光电器件的开发。
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