Department of Semiconductor Science, Dongguk University - Seoul, Seoul, 04623, Korea.
Quantum-Functional Semiconductor Research Center, Dongguk University - Seoul, Seoul, 04623, Korea.
Sci Rep. 2017 Sep 11;7(1):11065. doi: 10.1038/s41598-017-11393-9.
High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p-i-n Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Λ-NDT peak is greater than 10, the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Λ-NDT peak region is ~70 mV/dec. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.
高性能负微分跨导（NDT）器件采用栅控 p-i-n Si 超薄体晶体管形式制造。器件在室温下清晰地显示出 Λ 形转移特性（即 Λ-NDT 峰），NDT 行为完全基于源极-漏极静电结特性的栅极调制。Λ-NDT 峰的最大峰谷电流比大于 10，最小半峰全宽小于 170 mV，在 Λ-NDT 峰区的最佳摆幅斜率约为 70 mV/dec。通过仅控制栅极和/或漏极的偏置电压来调制结特性时，可以系统地控制 Λ-NDT 峰的位置和电流水平。这些独特的特性使得我们能够展示多值逻辑功能，例如三值逻辑和四值逻辑。结果表明，这种 Si Λ-NDT 器件有望成为下一代算术电路的候选器件。
