Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University , Changsha 410082, People's Republic of China.
Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, People's Republic of China.
ACS Nano. 2017 Oct 24;11(10):9869-9876. doi: 10.1021/acsnano.7b03660. Epub 2017 Sep 22.
Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr nanoplates on prepatterned indium tin oxide (ITO) electrodes via a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems.
金属卤化物钙钛矿纳米结构由于其优异的光电性能，有望成为集成光子学的纳米级光源。然而，由于卤化物钙钛矿可溶解在传统器件制造工艺所需的极性溶剂中，因此使用传统光刻方法制造卤化物钙钛矿纳米器件仍然是一个巨大的挑战。在此，我们报告了通过气相沉积直接在预先图案化的铟锡氧化物（ITO）电极上生长 CsPbBr 纳米板来制造单个 CsPbBr 纳米板电致发光（EL）器件。在负偏置接触附近区域发生明亮的 EL，开启电压约为 3 V，半峰全宽较窄为 22nm，外量子效率约为 0.2%。此外，通过扫描光电流显微镜和表面静电势测量，我们发现形成具有高效载流子注入的 ITO/p 型 CsPbBr 肖特基势垒对于实现 EL 至关重要。通过相应的晶体管特性也证实了 ITO/p 型 CsPbBr 肖特基二极管的形成。通过直接生长的钙钛矿纳米结构实现的 EL 纳米器件的成就可能在片上集成光子学电路和系统中得到应用。
