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睡眠期间的可塑性与皮质回路活动的特定调节有关。

Plasticity during Sleep Is Linked to Specific Regulation of Cortical Circuit Activity.

机构信息

Institute of Medical Psychology and Behavioral Neurobiology, University of TübingenTübingen, Germany.

Center for Integrative Neuroscience, University of TübingenTübingen, Germany.

出版信息

Front Neural Circuits. 2017 Sep 15;11:65. doi: 10.3389/fncir.2017.00065. eCollection 2017.

Abstract

Sleep is thought to be involved in the regulation of synaptic plasticity in two ways: by enhancing local plastic processes underlying the consolidation of specific memories and by supporting global synaptic homeostasis. Here, we briefly summarize recent structural and functional studies examining sleep-associated changes in synaptic morphology and neural excitability. These studies point to a global down-scaling of synaptic strength across sleep while a subset of synapses increases in strength. Similarly, neuronal excitability on average decreases across sleep, whereas subsets of neurons increase firing rates across sleep. Whether synapse formation and excitability is down or upregulated across sleep appears to partly depend on the cell's activity level during wakefulness. Processes of memory-specific upregulation of synapse formation and excitability are observed during slow wave sleep (SWS), whereas global downregulation resulting in elimination of synapses and decreased neural firing is linked to rapid eye movement sleep (REM sleep). Studies of the excitation/inhibition balance in cortical circuits suggest that both processes are connected to a specific inhibitory regulation of cortical principal neurons, characterized by an enhanced perisomatic inhibition via parvalbumin positive (PV+) cells, together with a release from dendritic inhibition by somatostatin positive (SOM+) cells. Such shift towards increased perisomatic inhibition of principal cells appears to be a general motif which underlies the plastic synaptic changes observed during sleep, regardless of whether towards up or downregulation.

摘要

睡眠被认为通过两种方式参与突触可塑性的调节

通过增强特定记忆巩固的基础局部可塑性过程,以及通过支持全局突触稳态。在这里,我们简要总结了最近的结构和功能研究,这些研究检查了与突触形态和神经兴奋性相关的睡眠变化。这些研究表明,在睡眠过程中,突触强度会全面减弱,而一部分突触的强度会增加。类似地,神经元兴奋性在睡眠过程中平均降低,而部分神经元的放电率在睡眠过程中增加。突触形成和兴奋性是在睡眠过程中下调还是上调,似乎部分取决于清醒时细胞的活动水平。在慢波睡眠 (SWS) 期间观察到记忆特异性的突触形成和兴奋性上调过程,而导致突触消除和神经放电减少的全局下调与快速眼动睡眠 (REM 睡眠) 相关。皮层回路兴奋/抑制平衡的研究表明,这两个过程都与皮层主神经元的特定抑制调节有关,其特征是通过阳性 (PV+) 细胞增强胞体周围抑制,同时通过阳性 (SOM+) 细胞释放树突抑制。这种朝向主细胞胞体周围抑制增加的转变似乎是一个普遍的主题,它是睡眠过程中观察到的可塑性突触变化的基础,无论其是上调还是下调。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5883/5605564/130b84ae0770/fncir-11-00065-g0001.jpg

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