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原子氮/氢在双等离子体源化学辅助溅射生长氮化镓薄膜中的作用

Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources.

作者信息

Tanide Atsushi, Nakamura Shohei, Horikoshi Akira, Takatsuji Shigeru, Kimura Takahiro, Kinose Kazuo, Nadahara Soichi, Nishikawa Masazumi, Ebe Akinori, Ishikawa Kenji, Oda Osamu, Hori Masaru

机构信息

Rakusei Operation Center, SCREEN Holdings Co., Ltd., 322 Furukawa-cho, Fushimi, Kyoto 612-8486, Japan.

Center for Low-Temperature Plasma Sciences, Nagoya University, Furo-cho, Chikusa, Nagoya, Aichi 464-8601, Japan.

出版信息

ACS Omega. 2020 Oct 8;5(41):26776-26785. doi: 10.1021/acsomega.0c03865. eCollection 2020 Oct 20.

DOI:10.1021/acsomega.0c03865
PMID:33111004
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7581250/
Abstract

The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hydrogen (H) in GaN film growth on AlN/sapphire substrates by chemically assisted dual source sputtering are studied at a low growth temperature of 600 °C under a pressure of 2 Pa using vacuum ultraviolet absorption spectroscopy. The lateral growth was strongly enhanced with an appropriate H/N flux ratio of 1.9 at a GaN growth rate of ∼1 μm h. X-ray photoelectron spectroscopy measurements indicated that N removal from the grown GaN surface by atomic hydrogen promoted the migration of Ga. A smooth GaN surface was achieved at a suitable N/Ga supply ratio of 53 and a H/N ratio of 1.9 with the addition of 0.5% chlorine to the Ar sputtering gas.

摘要

为实现用于下一代通信技术的低成本氮化镓高电子迁移率晶体管器件的推广，低温溅射生长氮化镓备受期待。在本工作中，利用真空紫外吸收光谱，研究了在2 Pa压力、600 °C低温下，通过化学辅助双源溅射在AlN/蓝宝石衬底上生长氮化镓薄膜时，原子氮（N）/氢（H）的作用。在约1 μm h的氮化镓生长速率下，当H/N通量比为1.9时，横向生长得到显著增强。X射线光电子能谱测量表明，原子氢从生长的氮化镓表面去除氮促进了镓的迁移。在Ar溅射气体中添加0.5%的氯，当N/Ga供应比为53且H/N比为1.9时，可获得光滑的氮化镓表面。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3392/7581250/0fbde471fa07/ao0c03865_0012.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3392/7581250/0fbde471fa07/ao0c03865_0012.jpg

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本文引用的文献

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Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO.与ZnO晶格匹配的m面InGaN的脉冲溅射外延生长。
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