Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
Science. 2017 Jan 20;355(6322):271-276. doi: 10.1126/science.aaj1628.
High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate length of 5 nanometers can be fabricated that perform better than silicon complementary metal-oxide semiconductor (CMOS) FETs at the same scale. A scaling trend study revealed that the scaled CNT-based devices, which use graphene contacts, can operate much faster and at much lower supply voltage (0.4 versus 0.7 volts) and with much smaller subthreshold slope (typically 73 millivolts per decade). The 5-nanometer CNT FETs approached the quantum limit of FETs by using only one electron per switching operation. In addition, the contact length of the CNT CMOS devices was also scaled down to 25 nanometers, and a CMOS inverter with a total pitch size of 240 nanometers was also demonstrated.
高性能顶栅碳纳米管场效应晶体管（CNT FET）的栅长可达到 5 纳米，其性能优于相同尺寸的硅互补金属氧化物半导体（CMOS）FET。一项缩放趋势研究表明，采用石墨烯接触的缩放 CNT 基器件的运行速度更快，工作电压更低（0.4 伏对比 0.7 伏），亚阈值斜率更小（通常为每 10 年 73 毫伏）。5 纳米 CNT FET 通过每次开关操作仅使用一个电子，接近 FET 的量子极限。此外，CNT CMOS 器件的接触长度也缩小到 25 纳米，还展示了总节距尺寸为 240 纳米的 CMOS 逆变器。
