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VO/Ni 薄膜中生长诱导的面内单轴各向异性

Growth-Induced In-Plane Uniaxial Anisotropy in VO/Ni Films.

作者信息

Gilbert Dustin A, Ramírez Juan Gabriel, Saerbeck T, Trastoy J, Schuller Ivan K, Liu Kai, de la Venta J

机构信息

Physics Department, University of California, Davis, California, 95616, United States.

NIST Center for Neutron Research, Gaithersburg, Maryland, 20899, United States.

出版信息

Sci Rep. 2017 Oct 18;7(1):13471. doi: 10.1038/s41598-017-12690-z.

Abstract

We report on a strain-induced and temperature dependent uniaxial anisotropy in VO/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the VO; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the VO/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.

摘要

我们报道了VO/Ni混合薄膜中应变诱导且与温度相关的单轴各向异性,其通过界面应变和样品微观结构表现出来,以及它对角依赖磁化反转的影响。X射线衍射和倒易空间图确定了VO的面内晶轴;原子力显微镜和扫描电子显微镜揭示了薄膜微观结构中的定向撕裂。准静态磁力测量和动态铁磁共振测量确定了沿撕裂方向的单轴磁易轴。与在没有撕裂的蓝宝石上生长的薄膜相比,表明VO/Ni薄膜中应变和微观结构的综合作用。通过角依赖一阶反转曲线测量捕获的磁化反转特性表明,沿与撕裂方向正交的方向存在强烈的畴壁钉扎,从而导致反转机制的角依赖变化。由此产生的各向异性可随温度调节,并且在室温下最为明显,这对潜在的器件应用有利。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9c6b/5647448/8ff1657f8da0/41598_2017_12690_Fig1_HTML.jpg

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