Suppr超能文献

单层六方氮化硼的不同载流子迁移率:密度泛函理论与玻尔兹曼输运理论相结合的研究

Diverse carrier mobility of monolayer BNC : a combined density functional theory and Boltzmann transport theory study.

作者信息

Wu Tao, Deng Kaiming, Deng Weiqiao, Lu Ruifeng

机构信息

Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China. State Key Lab of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China.

出版信息

J Phys Condens Matter. 2017 Nov 15;29(45):455305. doi: 10.1088/1361-648X/aa8d9b. Epub 2017 Oct 19.

Abstract

BNC monolayer as a kind of two-dimensional material has numerous chemical atomic ratios and arrangements with different electronic structures. Via calculations on the basis of density functional theory and Boltzmann transport theory under deformation potential approximation, the band structures and carrier mobilities of BNC (x  =  1,2,3,4) nanosheets are systematically investigated. The calculated results show that BNC-1 is a material with very small band gap (0.02 eV) among all the structures while other BNC monolayers are semiconductors with band gap ranging from 0.51 eV to 1.32 eV. The carrier mobility of BNC varies considerably from tens to millions of cm V s. For BNC-1, the hole mobility and electron mobility along both x and y directions can reach 10 orders of magnitude, which is similar to the carrier mobility of graphene. Besides, all studied BNC monolayers obviously have anisotropic hole mobility and electron mobility. In particular, for semiconductor BNC, its hole mobility along the y direction and electron mobility along the x direction unexpectedly reach 10 orders of magnitude, even higher than that of graphene. Our findings suggest that BNC layered materials with the proper ratio and arrangement of carbon atoms will possess desirable charge transport properties, exhibiting potential applications in nanoelectronic devices.

摘要

作为一种二维材料,硼碳氮(BNC)单层具有众多不同电子结构的化学原子比和排列方式。基于密度泛函理论和在形变势近似下的玻尔兹曼输运理论进行计算,系统地研究了BNC (x = 1,2,3,4)纳米片的能带结构和载流子迁移率。计算结果表明,在所有结构中,BNC - 1是带隙非常小(0.02 eV)的材料,而其他BNC单层是带隙在0.51 eV至1.32 eV范围内的半导体。BNC的载流子迁移率变化很大,从几十到数百万厘米²/(伏·秒)。对于BNC - 1,沿x和y方向的空穴迁移率和电子迁移率均可达到10个数量级,这与石墨烯的载流子迁移率相似。此外,所有研究的BNC单层明显具有各向异性的空穴迁移率和电子迁移率。特别是,对于半导体BNC,其沿y方向的空穴迁移率和沿x方向的电子迁移率意外地达到10个数量级,甚至高于石墨烯。我们的研究结果表明,具有适当碳原子比例和排列的BNC层状材料将具有理想的电荷传输特性,在纳米电子器件中展现出潜在的应用。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验