Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Computational Centre for Molecular Science, Institute of New Energy Material Chemistry, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin 300071, P.R. China.
Nanoscale. 2015 Oct 14;7(38):16020-5. doi: 10.1039/c5nr04717j. Epub 2015 Sep 15.
MXene, a new kind of two-dimensional (2D) material, has a unique combination of excellent physical and chemical properties. Via computations on density functional theory and deformation potential theory, we investigated the electronic structure and predicted the carrier mobility of Ti2CO2 (a typical MXene) monolayers and nanoribbons. The Ti2CO2 monolayer is a semiconductor with a band gap of 0.91 eV, and the hole mobility in the monolayer reaches 10(4) orders of magnitude along both x and y directions, which is much higher than that of MoS2, while the electron mobility is about two orders of magnitude lower. The dramatic difference between the hole and electron mobilities also exists in nanoribbons. Moreover, our results suggest that width controlling and edge engineering would be effective in adjusting the carrier mobility of Ti2CO2 nanoribbons, and endow experimentally available Ti2CO2 with wide applications to field-effect transistors and photocatalysts.
MXene 是一种新型二维(2D)材料,具有独特的优异物理和化学性质组合。通过密度泛函理论和变形势理论的计算,我们研究了 Ti2CO2(一种典型的 MXene)单层和纳米带的电子结构,并预测了载流子迁移率。Ti2CO2 单层是一种半导体,带隙为 0.91eV,沿 x 和 y 方向的单层空穴迁移率达到 10(4)数量级,远高于 MoS2,而电子迁移率约低两个数量级。在纳米带中也存在空穴和电子迁移率的显著差异。此外,我们的结果表明,宽度控制和边缘工程将有效地调节 Ti2CO2 纳米带的载流子迁移率,并为实验上可用的 Ti2CO2 在场效应晶体管和光催化剂中得到广泛应用提供了可能。