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用于近红外的非热氮化硅角向多模干涉型波分复用(解复用)器

Athermal silicon nitride angled MMI wavelength division (de)multiplexers for the near-infrared.

作者信息

Bucio Thalía Domínguez, Khokhar Ali Z, Mashanovich Goran Z, Gardes Frederic Y

出版信息

Opt Express. 2017 Oct 30;25(22):27310-27320. doi: 10.1364/OE.25.027310.

DOI:10.1364/OE.25.027310
PMID:29092207
Abstract

WDM components fabricated on the silicon-on-insulator platform have transmission characteristics that are sensitive to dimensional errors and temperature variations due to the high refractive index and thermo-optic coefficient of Si, respectively. We propose the use of NH-free SiN layers to fabricate athermal (de)multiplexers based on angled multimode interferometers (AMMI) in order to achieve good spectral responses with high tolerance to dimensional errors. With this approach we have shown that stoichiometric and N-rich SiN layers can be used to fabricate AMMIs with cross-talk <30dB, insertion loss <2.5dB, sensitivity to dimensional errors <120pm/nm, and wavelength shift <10pm/°C.

摘要

在绝缘体上硅平台上制造的波分复用(WDM)组件具有传输特性,分别由于硅的高折射率和热光系数,其对尺寸误差和温度变化敏感。我们建议使用无氮的氮化硅层,基于角度多模干涉仪(AMMI)制造无热(解)复用器,以便在对尺寸误差具有高容忍度的情况下实现良好的光谱响应。通过这种方法,我们已经表明,化学计量比的和富氮的氮化硅层可用于制造串扰<30dB、插入损耗<2.5dB、对尺寸误差的敏感度<120pm/nm以及波长漂移<10pm/°C的角度多模干涉仪。

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