Zhang Ziyi, Yako Motoki, Ju Kan, Kawai Naoyuki, Chaisakul Papichaya, Tsuchizawa Tai, Hikita Makoto, Yamada Koji, Ishikawa Yasuhiko, Wada Kazumi
Department of Materials Engineering, University of Tokyo, Bunkyo, Japan.
Nanophotonics Center and NTT Device Technology Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Japan.
Sci Technol Adv Mater. 2017 Apr 13;18(1):283-293. doi: 10.1080/14686996.2017.1301193. eCollection 2017.
A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiN) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiN is precisely measured in the temperature range 24-76 °C using the SiN rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiN ring reveals nearly the same TO coefficient reported for stoichiometric CVD-SiN, while the value for the PVD-SiN ring is slightly higher. Both SiN rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiN needs a high temperature annealing to reduce N-H bond absorption, it is concluded that PVD-SiN is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a 'silicone' polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiN rings is locked within 50 GHz at the same temperature range in the wavelength range 1460-1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that AlO, GaO TaO, HfO and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications such as medical and environmental sensing and in-vehicle data-communication.
提出了一个用于在硅光子学中实现密集波分复用(DWDM)的新材料组。硅的大热光(TO)系数会导致芯片上的复用器/解复用器(MUX/DEMUX)在热波动下出现故障,因此实现DWDM一直是硅光子学中最具挑战性的目标之一。本研究通过对光学材料的TO系数和折射率进行系统调查,确定了一种用于DWDM的光学材料组。该组被归类为中折射率对比度光学(MiDex)材料,并选择非化学计量比的氮化硅(SiN)来证明其显著的热稳定性。使用通过化学气相沉积(CVD)和物理气相沉积(PVD)两种方法制备的SiN环,在24 - 76°C的温度范围内精确测量了非化学计量比SiN的TO系数。CVD - SiN环显示出与化学计量比CVD - SiN报道的TO系数几乎相同,而PVD - SiN环的值略高。在该温度范围内,两个SiN环的共振频率都锁定在100 GHz以内。由于CVD - SiN需要高温退火以减少N - H键吸收,得出结论:PVD - SiN适合作为引入CMOS后端制程的MiDex材料。考虑到两个通道之间的串扰,需要进一步稳定化;采用一种“硅酮”聚合物利用其负TO系数来补偿温度波动,即所谓的去热漂。这表明在1460 - 1620 nm波长范围内(光纤通信网络中所谓的S、C和L波段),在相同温度范围内这些SiN环的共振锁定在50 GHz以内。对MiDex材料的进一步调查强烈表明,AlO、GaO、TaO、HfO及其合金应为在MiDex光子学中实现DWDM提供更稳定的平台。讨论了MiDex光子学将在医疗和环境传感以及车载数据通信等方面找到各种应用。