Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Nanotechnology. 2017 Nov 24;28(47):474001. doi: 10.1088/1361-6528/aa929e.
2D metallic arrays with binary nanostructures derived from a nanosphere lithography (NSL) method have been rarely reported. Here, we demonstrate a novel NSL strategy to fabricate highly ordered 2D gold arrays with disc-in-hole binary (DIHB) nanostructures in large scale by employing a sacrificing layer combined with a three-step lift-off process. The structural parameters of the resultant DIHB arrays, such as periodicity, hole diameter, disc diameter and thicknesses can be facilely controlled by tuning the nanospheres size, etching condition, deposition angle and duration, respectively. Due to the intimate interactions between two subcomponents, the DIHB arrays exhibit both an extraordinary high surface-enhanced Raman scattering enhancement factor up to 5 × 10 and a low sheet resistance down to 1.7 Ω/sq. Moreover, the DIHB array can also be used as a metal catalyzed chemical etching catalytic pattern to create vertically-aligned Si nano-tube arrays for anti-reflectance application. This strategy provides a universal route for synthesizing other diverse binary nanostructures with controlled morphology, and thus expands the applications of the NSL to prepare ordered nanostructures with multi-function.
2D 具有二元纳米结构的金属阵列源于纳米球光刻（NSL）方法，但很少有报道。在这里，我们展示了一种新颖的 NSL 策略，通过采用牺牲层结合三步剥离工艺，在大规模上制造具有高度有序的二维金阵列和盘孔二元（DIHB）纳米结构。通过调整纳米球的尺寸、刻蚀条件、沉积角度和时间，可以轻松控制所得 DIHB 阵列的结构参数，如周期性、孔直径、盘直径和厚度。由于两个亚组件之间的紧密相互作用，DIHB 阵列表现出非凡的高表面增强拉曼散射增强因子高达 5×10，并且低电阻达到 1.7 Ω/sq。此外，DIHB 阵列还可以用作金属催化化学蚀刻的催化图案，以创建用于抗反射应用的垂直排列的硅纳米管阵列。该策略为合成具有可控形态的其他各种二元纳米结构提供了通用途径，并因此将 NSL 的应用扩展到制备具有多功能的有序纳米结构。
