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通过逐层精确控制实现二硫化钼的激光减薄与图案化

Laser Thinning and Patterning of MoS with Layer-by-Layer Precision.

作者信息

Hu Lili, Shan Xinyan, Wu Yanling, Zhao Jimin, Lu Xinghua

机构信息

Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.

出版信息

Sci Rep. 2017 Nov 14;7(1):15538. doi: 10.1038/s41598-017-15350-4.

DOI:10.1038/s41598-017-15350-4
PMID:29138427
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5686209/
Abstract

The recently discovered novel properties of two dimensional materials largely rely on the layer-critical variation in their electronic structure and lattice symmetry. Achieving layer-by-layer precision patterning is thus crucial for junction fabrications and device engineering, which hitherto poses an unprecedented challenge. Here we demonstrate laser thinning and patterning with layer-by-layer precision in a two dimensional (2D) quantum material MoS. Monolayer, bilayer and trilayer of MoS films are produced with precise vertical and lateral control, which removes the extruding barrier for fabricating novel three dimensional (3D) devices composed of diverse layers and patterns. By tuning the laser fluence and exposure time we demonstrate producing MoS patterns with designed layer numbers. The underlying physics mechanism is identified to be temperature-dependent evaporation of the MoS lattice, verified by our measurements and calculations. Our investigation paves way for 3D device fabrication based on 2D layered quantum materials.

摘要

二维材料最近发现的新奇特性很大程度上依赖于其电子结构和晶格对称性的层临界变化。因此,实现逐层精确图案化对于结制造和器件工程至关重要,而这迄今为止带来了前所未有的挑战。在此,我们展示了在二维(2D)量子材料MoS₂中进行逐层精确的激光减薄和图案化。通过精确的垂直和横向控制制备出了单层、双层和三层的MoS₂薄膜,这消除了制造由不同层和图案组成的新型三维(3D)器件的阻碍。通过调节激光能量密度和曝光时间,我们展示了能够制备出具有设计层数的MoS₂图案。经测量和计算验证,其潜在物理机制被确定为MoS₂晶格的温度依赖性蒸发。我们的研究为基于二维层状量子材料的三维器件制造铺平了道路。

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Selective CW Laser Synthesis of MoS and Mixture of MoS and MoO from (NH)MoS Film.从(NH)₂MoS₄薄膜中选择性连续波激光合成MoS₂以及MoS₂与MoO₃的混合物

本文引用的文献

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Enhancement of Exciton Emission from Multilayer MoS at High Temperatures: Intervalley Transfer versus Interlayer Decoupling.在高温下增强多层 MoS 的激子发射:谷间转移与层间去耦。
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