Zadorozhnyi Ihor, Li Jing, Pud Sergii, Hlukhova Hanna, Handziuk Volodymyr, Kutovyi Yurii, Petrychuk Mykhailo, Vitusevich Svetlana
Bioelectronics (ICS-8), Forschungszentrum Jülich, 52425, Jülich, Germany.
Faculty of Radiophysics, Electronics and Computer Systems, Taras Shevchenko National University of Kyiv, 03127, Kyiv, Ukraine.
Small. 2018 Jan;14(2). doi: 10.1002/smll.201702516. Epub 2017 Nov 22.
In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley-Read-Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.
在本研究中，报道了硅纳米线（NW）场效应晶体管（FET）中的输运特性和单陷阱现象。研究了伽马辐射处理前后NW FET漏极电流的动态行为，其偏离了肖克利-里德-霍尔模型的预测，并通过考虑积累区中额外能垒的概念来解释。结果表明，单陷阱与纳米线沟道之间的电荷交换过程动力学强烈依赖于伽马辐射处理。这些结果表明了在许多先进器件中利用单陷阱现象的潜力。
