界面波动氮化镓量子点单光子发射的温度依赖性

Temperature dependence of the single photon emission from interface-fluctuation GaN quantum dots.

作者信息

Le Roux F, Gao K, Holmes M, Kako S, Arita M, Arakawa Y

机构信息

Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan.

Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan.

出版信息

Sci Rep. 2017 Nov 23;7(1):16107. doi: 10.1038/s41598-017-16040-x.

DOI:10.1038/s41598-017-16040-x

PMID:29170385

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5700965/

Abstract

The temperature dependent single photon emission statistics of interface-fluctuation GaN quantum dots are reported. Quantum light emission is confirmed at temperatures up to ~77 K, by which point the background emission degrades the emission purity and results in a measured g (0) in excess of 0.5. A discussion on the extent of the background contamination is also given through comparison to extensive data taken under various ambient and experimental conditions, revealing that the quantum dots themselves are emitting single photons with high purity.

摘要

报道了界面起伏氮化镓量子点的温度相关单光子发射统计特性。在高达约77K的温度下确认了量子光发射，此时背景发射会降低发射纯度，并导致测得的g(0)超过0.5。通过与在各种环境和实验条件下获取的大量数据进行比较，还对背景污染的程度进行了讨论，结果表明量子点本身正在发射高纯度的单光子。